Hole injection into transparent n-types Si layersBERGER, H. H.I.E.E.E. transactions on electron devices. 1983, Vol ED 30, Num 10, pp 1413-1414, issn 0018-9383Article

L'unité métaphysique comme intersubjectivitéBERGER, H. H.Tijdschrift voor philosophie. 1989, Vol 51, Num 2, pp 207-221, issn 0040-750XArticle

A new approach to statistically modelling the time dependent oxide breakdownVOLLERTSEN, R.-P.Quality and reliability engineering international. 1993, Vol 9, Num 4, pp 325-331, issn 0748-8017Conference Paper

Analysis of MOS SOI transistor degradationBERLAND, V; TOUBOUL, A; FLAMENT, O et al.Quality and reliability engineering international. 1993, Vol 9, Num 4, pp 353-357, issn 0748-8017Conference Paper

Plastic encapsulated IC reliability prediction modelling: principal resultsNALLINO, M; DIGOUT, R; DELEUZE, G et al.Quality and reliability engineering international. 1993, Vol 9, Num 4, pp 267-279, issn 0748-8017Conference Paper

Analysis of ESD protection networks for DMOS power transistors by means of static and time-resolved emission microscopyBONATI, B; CANCLINI, A; CAVONE, M et al.Quality and reliability engineering international. 1993, Vol 9, Num 4, pp 315-319, issn 0748-8017Conference Paper

Low frequency noise and reliability analysis of avalanche photodiodesJONES, B. K; KOZLOWSKI, D. A.Quality and reliability engineering international. 1993, Vol 9, Num 4, pp 359-362, issn 0748-8017Conference Paper

Optimization of buffer stages in bipolar VLSI systemsKONSTADINIDIS, G. K; BERGER, H. H.IEEE journal of solid-state circuits. 1992, Vol 27, Num 7, pp 1002-1013, issn 0018-9200Article

Oxide growth enhancement related to annealing induced arsenic accumulation in the Si/SiO₂ interface regionBERGER, H. H; MÜLLER, B; JACOB, K et al.Journal of the Electrochemical Society. 1996, Vol 143, Num 1, pp L15-L16, issn 0013-4651Article

Degradation behaviour of highly coherent 1.55 μm long-cavity multiple quantum well DFB lasersFUKUDA, M; KANO, F; KUROSAKI, T et al.Quality and reliability engineering international. 1993, Vol 9, Num 4, pp 363-365, issn 0748-8017Conference Paper

Electromigration, models and atomistic interpretationKIRCHHEIM, R.Quality and reliability engineering international. 1993, Vol 9, Num 4, pp 287-293, issn 0748-8017Conference Paper

Failure mechanisms in life-tested HEMTsANDERSON, W. T; CHRISTIANSON, K. A; MOGLESTUE, C et al.Quality and reliability engineering international. 1993, Vol 9, Num 4, pp 367-370, issn 0748-8017Conference Paper

Simulation, a tool for designing-in reliabilityBROMBACHER, A; VAN GEEST, E; ARENDSEN, R et al.Quality and reliability engineering international. 1993, Vol 9, Num 4, pp 239-249, issn 0748-8017Conference Paper

The impact of electronic components on the reliability of carsKUMPFMÜLLER, H.-G.Quality and reliability engineering international. 1993, Vol 9, Num 4, pp 251-255, issn 0748-8017Conference Paper

Nilvadipine in hypertension with renal dysfunctionBERGER, H. H; ALBERT, F. W.Journal of cardiovascular pharmacology. 1992, Vol 20, pp S73-S79, issn 0160-2446, SUP6Conference Paper

The influence of silicon oxide layer thickness on hydrogen accumulation in the SiO₂/Si transition zoneMASER, K; BERGER, H. H; KRAUSER, J et al.Experimentelle Technik der Physik. 1995, Vol 41, Num 1, pp 101-116, issn 0014-4924Article

Breakdown characteristics of gate and tunnel oxides versus field and temperatureMONSERIE, C; MORTINI, P; GHIBAUDO, G et al.Quality and reliability engineering international. 1993, Vol 9, Num 4, pp 321-324, issn 0748-8017Conference Paper

Electromigration in AlCu interconnections with W-plug contactsFERLAZZO, L; REIMBOLD, G; GONCHOND, J. P et al.Quality and reliability engineering international. 1993, Vol 9, Num 4, pp 299-302, issn 0748-8017Conference Paper

Failures of AlGaAs/GaAs HEMTs induced by hot electronsTEDESCO, C; CANALI, C; MAGISTRALI, C et al.Quality and reliability engineering international. 1993, Vol 9, Num 4, pp 371-376, issn 0748-8017Conference Paper

Field components reliability analysis for French Telecommunications equipmentBOULAIRE, J. Y; BAUDUIN, B; LELIEVRE, A et al.Quality and reliability engineering international. 1993, Vol 9, Num 4, pp 257-265, issn 0748-8017Conference Paper

Limitations of oxide breakdown accelerated testing for reliability simulationNAFRIA, M; SUNE, J; AYMERICH, X et al.Quality and reliability engineering international. 1993, Vol 9, Num 4, pp 333-336, issn 0748-8017Conference Paper

Reliability simulations of the endurance performance of FLOTOX EEPROM cells using spiceGIGON, F; PAPADAS, C; GHIBAUDO, G et al.Quality and reliability engineering international. 1993, Vol 9, Num 4, pp 347-352, issn 0748-8017Conference Paper

Robust design of circuits susceptible to electromigrationVAN GEEST, E; BROMBACHER, A; HERRMANN, O et al.Quality and reliability engineering international. 1993, Vol 9, Num 4, pp 281-285, issn 0748-8017Conference Paper